X-ray residual stress measurement of silicon nitride by gaussian curve method.

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Silicon nitride transmission X-ray mirrors

Transmission X-ray mirrors have been fabricated from 300-400 nm-thick low-stress silicon nitride windows of size 0.6 mm x 85 mm. The windows act as a high-pass energy filter at grazing incidence in an X-ray beam for the beam transmitted through the window. The energy cut-off can be selected by adjusting the incidence angle of the transmission mirror, because the energy cut-off is a function of ...

متن کامل

Residual stress field of HIPed silicon nitride rolling elements

The residual stress field of HIPed Si3N4 rolling elements were studied. Two kinds of HIPed Si3N4 ball blanks self-finished at different nominal lapping loads ranging from 1.3kgf/ball to 10.87kgf/ball and four kinds of commercially finished 1⁄2′′ (12.7mm) HIPed Si3N4 balls before, during and after RCF tests were investigated. The experimental results showed that in the finishing process of HIPed...

متن کامل

Depth-resolved residual stress evaluation from X-ray diffraction measurement data using the approximate inverse method

The paper deals with the depth determination of residual stress states from diffraction data. First an historical overview of the known approaches is given. Then we apply the approximate inverse method to this problem. This method is known to be very efficient and stable with respect to noise-contaminated data. It is even possible to prove convergence and it allows an error estimate of the calc...

متن کامل

Measurement of residual stress in multicrystalline silicon ribbons by a self-calibrating infrared photoelastic method

This article reports on a method for the measurement of residual stress in multicrystalline silicon ribbons, based on the infrared photoelastic technique. This self-calibrating method allows the in situ determination of the photoelastic coefficients and can thus be used for any crystal orientation. The method was validated by the experimental determination of the photoelastic coefficient of mon...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: TRANSACTIONS OF THE JAPAN SOCIETY OF MECHANICAL ENGINEERS Series A

سال: 1989

ISSN: 0387-5008,1884-8338

DOI: 10.1299/kikaia.55.152